dm nh6012lk3 document number: ds 37381 r ev. 3 - 2 1 of 7 www.diodes.com october 2015 ? diodes incorporated dmn h6012lk3 new product 60v +175c n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t c = + 25c 6 0v 1 2 m ? @ v gs = 10 v 60a 18 m ? @ v gs = 4 .5 v 50a description and applications this mosfet is designed to meet the stringent requirements of automotive applications. it is qualified to aec - q101 and ideal for use in : ? body control electronics ? dc / dc converters features ? rated to +175 c - ideal for high ambient temperature environments ? 1 00% unclamped inductive switching C ensures m ore reliable and robust e nd a pplication ? low on - resistance ? low input capacitance ? lead - free finish; rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: to 252 ? case material: molded plastic, Dgreen molding compound. ? ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish - matte tin a nnealed over copper leadframe. solderable per mil - std - 202, method 208 ? w eight: 0. 33 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm n h 601 2 l k3 - 13 to252 25 00 /tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900 ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information equivalent circuit pin out top view =manufacturer s marking h6012l = product type marking code yyww = date code marking yy = last two digits of year (ex: 1 5 = 201 5 ) ww = week code (01 to 53) top view yyww h6012l green
dm nh6012lk3 document number: ds 37381 r ev. 3 - 2 2 of 7 www.diodes.com october 2015 ? diodes incorporated dmn h6012lk3 new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 60 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v t c = + 25c t c = + 10 0c i d 60 40 a pulsed drain curren t ( 38 0 ? dm 120 a maximum continuous body diode f orward current (note 6 ) i s 2.6 a avalanche current, l = 0.1mh (note 7 ) i as 45 a avalanche energy, l = 0.1mh (note 7 ) e as 100 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 2.0 w thermal resistance, junction to ambient (note 5 ) s teady state r ? ja 74 c/w total power dissipation (note 6 ) p d 3. 8 w thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 40 c/w thermal resistance, junction to case r ? j c 1. 2 operating and storage temperature range t j, t stg - 55 to +1 7 5 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 60 v v gs = 0v, i d = 250a zero gate voltage drain current , t j = +25c i dss 1 a v ds = 60 v, v gs = 0v gate - source leakage i gss 100 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1 3 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) 8 12 m v gs = 10 v, i d = 25 a 10 18 v gs = 4 .5 v, i d = 25 a diode forward voltage v sd 0.7 1.2 v v gs = 0v, i s = 1.7 a dynamic characteristics (note 9 ) input capacitance c iss 1926 pf v ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss 330 pf reverse transfer capacitance c rss 112 pf gate resistance r g 2.0 v ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g 16.3 nc v ds = 30 v, i d = 25 a total gate charge ( v gs = 10 v ) q g 35.2 nc gate - source charge q gs 7.6 nc gate - drain charge q gd 6.9 nc turn - on delay time t d( on ) 6.4 ns v gs = 10 v , v ds = 30 v , r g = 3 , i d = 25 a turn - on rise time t r 11.9 ns turn - off delay time t d( off ) 16.5 ns turn - off fall time t f 5 ns body diode reverse recovery time t rr ? 28 ? n s i f = 25 a, di/dt = 1 0 0a/s body diode reverse recovery charge q rr ? 23 ? n c notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . i a s and e a s rating s are based on low frequency and duty cycles to keep t j = + 25c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm nh6012lk3 document number: ds 37381 r ev. 3 - 2 3 of 7 www.diodes.com october 2015 ? diodes incorporated dmn h6012lk3 new product 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =3.0v v gs =3.5v v gs =4.0v v gs =4.5v v gs =10.0v 0 3 6 9 12 15 1.5 2 2.5 3 3.5 4 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds =5v - 55 25 85 175 150 125 5 10 15 20 25 30 35 40 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance (m ? ) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =25a 5.00 10.00 15.00 20.00 25.00 5 10 15 20 25 30 35 40 45 50 r ds(on) , drain - source on - resistance (m ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =4.5v v gs =10.0v 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs =10v, i d =25a v gs =4.5v, i d =25a 0 0.005 0.01 0.015 0.02 5 10 15 20 25 30 r ds(on) , drain - source on - resistance (m ? d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature v gs =10v - 55 25 85 175 150 125
dm nh6012lk3 document number: ds 37381 r ev. 3 - 2 4 of 7 www.diodes.com october 2015 ? diodes incorporated dmn h6012lk3 new product 0 0.005 0.01 0.015 0.02 0.025 0.03 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance ( ? ) t j , junction temperature ( ) figure 7. on - resistance variation with temperature v gs =4.5v, i d =25a v gs =10v, i d =25a 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 - 50 - 25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d =250 a i d =1ma 0.1 1 10 100 1000 10000 100000 0 10 20 30 40 i dss , leakage current (na) v ds , drain - source voltage (v) figure 10. typical drain - source leakage current vs. voltage 25 85 125 150 175 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t a = - 55 v gs =0v, t a =25 v gs =0v, t a =125 v gs =0v, t a =150 v gs =0v, t a =175 v gs =0v, t a =85 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 v gs (v) q g (nc) figure 12. gate charge v ds =30v, i d =25a 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 11. typical junction capacitance f=1mhz c iss c oss c rss
dm nh6012lk3 document number: ds 37381 r ev. 3 - 2 5 of 7 www.diodes.com october 2015 ? diodes incorporated dmn h6012lk3 new product 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 14. transient thermal resistance r ja (t)=r(t) * r ja r ja = 73.5 /w duty cycle, d=t1 / t2 d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.7 d=0.9 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 13. soa, safe operation area t j(max) =1 75 t c =25 single pulse dut on 1*mrp board v gs = 10 v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms
dm nh6012lk3 document number: ds 37381 r ev. 3 - 2 6 of 7 www.diodes.com october 2015 ? diodes incorporated dmn h6012lk3 new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. dimensions value (in mm) c 4.572 x 1.060 x1 5.632 y 2.600 y1 5.700 y2 10.700 b3 e l3 d l4 b2(2x) b(3x) e c a 7 1 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1 x1 x y2 y1 y c
dm nh6012lk3 document number: ds 37381 r ev. 3 - 2 7 of 7 www.diodes.com october 2015 ? diodes incorporated dmn h6012lk3 new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirem ents concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furthe r, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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